Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET
نویسندگان
چکیده
In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to structural aspect through comparison two devices. Similar n-type devices, NW-FETs are less affected than FinFETs by TID effect. For inverter circuit simulation, both n- p-types NW-FET were regarding The operation considering was verified using Berkeley short-channel insulated-gate model (BSIM) common multi-gate (CMG) parameters. addition, an composed exhibited a smaller change that FinFET. Therefore, gate controllability gate-all-around (GAA) device had excellent tolerance not only effects (SCE) but also effects.
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ژورنال
عنوان ژورنال: Applied sciences
سال: 2021
ISSN: ['2076-3417']
DOI: https://doi.org/10.3390/app11030894